STP180N4F6 データシート - STMicroelectronics
部品番号
STP180N4F6
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13 Pages
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669.2 kB
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STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
• Power tools
部品番号
コンポーネント説明
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メーカー
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