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STD4N25 データシート - STMicroelectronics

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STD4N25

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

■ TYPICAL RDS(on) = 0.7 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)


APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIAL ACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT
■ PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS

 

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コンポーネント説明
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メーカー
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Comset Semiconductors
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Comset Semiconductors
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics

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