メーカー
STMicroelectronics
Description
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
FEATUREs
• Designed for automotive applications and
AEC-Q101 qualified
• Extremely low gate charge
• Exceptional dv/dt capability
• Low gate input resistance
• 100% avalanche tested
APPLICATIONs
• Switching applications
Automotive-grade N-channel 55 V, 6.5 mΩ typ., 80 A STripFET F3 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade N-channel 500 V, 0.10 Ω typ., 26 A MDmesh™ DM2 Power MOSFET in a D²PAK package
STMicroelectronics
Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package ( Rev : 2014 )
STMicroelectronics
Automotive-grade N-channel 40 V, 5.5 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package ( Rev : 2014 )
STMicroelectronics