STD11NM60N(2006) データシート - STMicroelectronics
部品番号
STD11NM60N
コンポーネント説明
Other PDF
PDF
page
17 Pages
File Size
463.2 kB
メーカー
STMicroelectronics
Description
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
General Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
APPLICATIONs
■ Switching application
部品番号
コンポーネント説明
PDF
メーカー
N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
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N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET
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N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET ( Rev : 2008_01 )
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