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STB28N60DM2 データシート - STMicroelectronics

STB28N60DM2 image

部品番号
STB28N60DM2

Other PDF
  2017  

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page
20 Pages

File Size
1.1 MB

メーカー
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.


FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input
   capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected


APPLICATIONs
• Switching applications


部品番号
コンポーネント説明
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メーカー
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