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STB25NM60ND データシート - Inchange Semiconductor

STB25NM60ND image

部品番号
STB25NM60ND

コンポーネント説明

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2 Pages

File Size
282.6 kB

メーカー
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Low Drain-Source On-Resistance

FEATURES
• Drain Current –ID=21A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 600V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 160mΩ (Max)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

APPLICATIONS
• Switching application

 

部品番号
コンポーネント説明
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