STB21N90K5 データシート - STMicroelectronics
部品番号
STB21N90K5
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22 Pages
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990.6 kB
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STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
FEATUREs
■ TO-220 worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener-protected
APPLICATIONs
■ Switching applications
部品番号
コンポーネント説明
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N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packages
STMicroelectronics
N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH™ Power MOSFET ( Rev : 2010 )
STMicroelectronics
N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH™5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH™ 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2012 )
STMicroelectronics
N-channel 800 V, 0.65Ωtyp., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages ( Rev : 2012 )
STMicroelectronics
N-channel 650 V, 0.073 Ω, 30 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
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