Description
This Power MOSFET is the latest development of STMicroelectronis unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
FEATUREs
■ 100% avalanche tested
■ Standard level gate drive
■ For through-hole version contact sales office
APPLICATION
■ Switching applications