Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

FEATUREs
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Through hole TO-262 (I2PAK) power package in tube (suffix “-1”)

APPLICATIONs
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies