PRODUCT DESCRIPTION
The SST32HF202/402/802 ComboMemory devices integrate a 128K x16, 256K x16, 512K x16 CMOS flash memory bank with a 128K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high performance SuperFlash technology.

FEATURES:
• MPF + SRAM ComboMemory
    – SST32HF202: 128K x16 Flash + 128K x16 SRAM
    – SST32HF402: 256K x16 Flash + 128K x16 SRAM
    – SST32HF802: 512K x16 Flash + 128K x16 SRAM
• Single 2.7-3.3V Read and Write Operations
• Concurrent Operation
    – Read from or write to SRAM while Erase/Program Flash
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption:
    – Active Current: 15 mA (typical) for Flash or SRAM Read
    – Standby Current: 20 µA (typical)
• Flexible Erase Capability
    – Uniform 2 KWord sectors
    – Uniform 32 KWord size blocks
• Fast Read Access Times:
    – Flash: 70 ns
    – SRAM: 70 ns
• Latched Address and Data for Flash
• Flash Fast Erase and Word-Program:
    – Sector-Erase Time: 18 ms (typical)
    – Block-Erase Time: 18 ms (typical)
    – Chip-Erase Time: 70 ms (typical)
    – Word-Program Time: 14 µs (typical)
    – Chip Rewrite Time:
        SST32HF202: 2 seconds (typical)
        SST32HF402: 4 seconds (typical)
        SST32HF802: 8 seconds (typical)
• Flash Automatic Erase and Program Timing
    – Internal VPP Generation
• Flash End-of-Write Detection
    – Toggle Bit
    – Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Command Set
• Conforms to Flash pinout
• Packages Available
    – 48-ball LFBGA (6mm x 8mm)
    – 48-ball LBGA (10mm x 12mm) (SST32HF802 only)
• All non-Pb (lead-free) devices are RoHS compliant