SSM6G18NU(2014) データシート - Toshiba
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SSM6G18NU
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Toshiba
Power Management Switch Applications
• Combined a P-channel MOSFET and a Schottky barrier diode in one package.
• Low RDS (ON) and Low VF
RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)
RDS(ON) = 185 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 143 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 112 mΩ (max) (@VGS = -4.5 V)
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