メーカー
Silikron Semiconductor Co.,LTD.
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications
FEATUREs and Benefits:
◾ Advanced trench MOSFET process technology
◾ Special designed for buttery protection, load
switching and general power management
◾ Ultra low on-resistance with low gate charge
◾ Fast switching and reverse body recovery
◾ 150℃ operating temperature
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.
Advanced trench MOSFET process technology
Silikron Semiconductor Co.,LTD.