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![Secos](/logo/Secos.png)
Secos Corporation.
![Secos](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation.
FEATURES
• Low RDS(on) provides higher efficiency and extends
battery life.
• Low gate charge
• Fast switch
• Miniature SOT-323 surface mount package saves
board space.
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
0.8A, 20V, RDS(ON) 350mΩ N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
2.1A , 20V , RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
2.1A, 20V, RDS(ON) 60 mΩ N-Channel Enhancement Mode Power MOSFET
Secos Corporation.
6.3A, 20V, RDS(ON) 34mΩ N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
0.6A, 20V,RDS(ON) 600mΩ N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-2A, -100V, RDS(ON) 350 mΩ P-Channel Enhancement Mode MOSFET
Secos Corporation.
90A , 100V , RDS(ON) 16mΩ N-Channel Enhancement Mode MOSFET
Secos Corporation.
1A, 250V, RDS(ON) 1.78Ω N-Channel Enhancement Mode MOSFET
Secos Corporation.
2A, -30V, RDS(ON) 170mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
1A, 250V, RDS(ON) 1.78Ω N-Channel Enhancement Mode MOSFET
Secos Corporation.