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SRAF08 データシート - Mospec Semiconductor

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SRAF08

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Mospec
Mospec Semiconductor Mospec

Switchmode Full Plastic Dual SchottkyBarrier Power Rectifiers
8 AMPERES 70-100 VOLTS

Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling and polarityprotection diodes.

* LowForward Voltage.
* LowSwitching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* LowPower Loss & High efficiency.
* 125℃ Operating Junction Temperature
* LowStored Charge MajorityCarrier Conduction.
* Plastic Material used Carries Underwriters Laboratory

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Switchmode Full Plastic Dual Ultrafast Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Ultrafast Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Ultrafast Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Ultrafast Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Mospec Semiconductor
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Mospec Semiconductor

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