Features
• Unmounted monolithic linear array
• High-efficiency MOVPE-grown quantum-well structure
• Highly-reliable strained-layer InGa(Al)As/GaAs material
• Standard wavelength selection is ± 3 nm, others on request
• Solderable p- and n-side metallization

APPLICATIONs
• Pumping of solid state lasers (Nd, Yb, Er, Ho, …)
• Direct material processing (soldering, surface treatment, marking, welding, etc.)
• Heating, illumination
• Medical and printing application