DESCRIPTION
The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

FEATURES
✦ P-Channel
   -30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V
   -30V/-2.5A,RDS(ON)=115mΩ@VGS=-4.5V
   -30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V
✦ Schottky
   VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A
✦ Super high density cell design for extremely low
   RDS (ON)
✦ Exceptional on-resistance and maximum DC
   current capability
✦ TSOP– 6P package design

APPLICATIONS
● Battery Powered System
● DC/DC Converter
● Load Switch
● Cell Phone