Product Description
Stanford Microdevices’ SLN-386 is a high performance GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost 85 mil (2.2mm) diameter plastic package. This HBT MMIC is fabricated using molecular beam epitaxial growth technology which produces reliable and consistant performance from wafer to wafer.

Product Features
• Patented Reliable GaAs HBT Technology
• Low Noise Figure : 3.4dB at 0.9GHz
• High 3rd Order Intercept : +20dBm
• High Associated Gain : 19dB
• True 50 Ohm MMIC : No External Matching Required
• Low Cost Surface Mountable Plastic Package

Applications
• Cellular, PCS, CDPD, Wireless Data
• Pagers