SKW15N120(2013) データシート - Infineon Technologies
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SKW15N120
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14 Pages
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Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
• Lower Eoff compared to previous generation
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/
部品番号
コンポーネント説明
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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
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