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SGA-8343 データシート - Sirenza Microdevices => RFMD

SGA-8343 image

部品番号
SGA-8343

コンポーネント説明

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4 Pages

File Size
90.5 kB

メーカー
Sirenza
Sirenza Microdevices => RFMD Sirenza

Product Description
Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required.

Product Features
• Now Available in Lead Free, RoHS Compliant, & Green Packaging
• DC-6 GHz Operation
• 0.9 dB NFMIN @ 0.9 GHz
• 24 dB Gmax @ 0.9 GHz
• |GOPT|=0.10 @ 0.9 GHz
• OIP3 = +28 dBm, P1dB = +9 dBm
• Low Cost, High Performance, Versatility


APPLICATIONs
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS, RFID
• Fixed Wireless, Pager Systems
• Driver Stage for Low Power Applications
• Oscillators

Page Link's: 1  2  3  4 

部品番号
コンポーネント説明
PDF
メーカー
Low Noise, High Gain SiGe HBT
Unspecified
LOW NOISE, HIGH GAIN SiGe HBT
RF Micro Devices
Low Noise, High Gain SiGe HBT
Stanford Microdevices
Microwave, low noise, SiGe NPN HBT
SHIKE Electronics
SiGe HBT type For low-noise RF amplifier
Panasonic Corporation
SiGe HBT type For low-noise RF amplifier
Panasonic Corporation
SiGe HBT type For low-noise RF amplifier
Panasonic Corporation
SiGe HBT type For low-noise RF amplifier
Panasonic Corporation
High Gain, Low Noise Amplifier ( Rev : 2002 )
Infineon Technologies
High Gain, Low Noise Amplifier
STMicroelectronics

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