DESCRIPTION
SiC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operation during surge or over_voltage conditions.

FEATURES
• Max Junction Temperature 175°C
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery

MECHANICAL DATA
• Case: JEDEC TO-247AB
• Molding compound meets UL94V-0 flammability rating
• Terminals: Lead solderable per J-STD-002 and JESD22-B102
• Polarity: As marked
• Mounting Torque: 10 in-Ibs maximum

TYPICAL APPLICATIONS
• General Purpose
• SMPS, Solar inverter, UPS
• Power Switching Circuits