Description
The Raytheon RMM5030 is an X-band two-stage dual channel GaAs MMIC power amplifier operating over 9-10 GHz which can be configured to provide either 34 dBm of minimum saturated single channel power into 50 ohms or 37 dBm combined. This unique chip configuration incorporates a pair of parallel channels each containing two reactively matched stages consisting of 2x1.4 mm FETs driving 4x2.0 mm FETs for a total FET periphery of 21.6 mm. Either channel can be operated as an independent amplifier in a 50 ohm system to provide 34 dBm power output with the adjacent channel retained as a spare. Alternatively the two channels can be combined to provide 37 dBm power output. In this case an external transformer or combiner is required for operation in a 50 ohm system. The FETs are fabricated using Raytheon’s proven 0.5 mm Ti/Pt/Au gate MESFET process. The RMM5030 is ideally suited for power stage applications where limited space is available. It also allows the user to bias stages individually to customize performance and maximize amplifier efficiency.

FEATUREs
◆ 37.8 dBm typical power into 25 Ω @ 2 dB compression
◆ Power added efficiency is greater than 20%
◆ 14 dB small signal gain
◆ Separate stage biasing to maximize efficiency
◆ Input match VSWR is less than 2.0:1
◆ Via hole grounding
◆ Chip Size: 223 mils x 213 mils x 4 mils