Silicon N Channel IGBT Application: Inverter

FEATUREs
Short circuit withstand time (5µs typ.)
Low collector to emitter saturation voltage
  VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching 
  tf= 80 ns typ. (at VCC= 300 V, VGE= 15 V, IC= 12 A, Rg = 5 , Ta = 25°C, inductive load)