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RHRG30100 データシート - Harris Semiconductor

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部品番号
RHRG30100

コンポーネント説明

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Harris
Harris Semiconductor Harris

The RHRG3070, RHRG3080, RHRG3090 and RHRG30100 (TA49064) are hyperfast diode with soft recovery characteristics (trr < 65ns). They have half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
These device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.


FEATUREs
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <65ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175°C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction


APPLICATIONs
• Switching Power Supplies
• Power Switching Circuits
• General Purpose

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部品番号
コンポーネント説明
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メーカー
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