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RFM18N08 データシート - Intersil

RFM18N08 image

部品番号
RFM18N08

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Intersil
Intersil Intersil

Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.


FEATUREs
• 18A, 80V and 100V
• rDS(ON) = 0.100Ω
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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部品番号
コンポーネント説明
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メーカー
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs ( Rev : V2 )
New Jersey Semiconductor
25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs
New Jersey Semiconductor
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Harris Semiconductor
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
Intersil
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
New Jersey Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Intersil
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Intersil
1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
Intersil
-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
Intersil
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Intersil

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