RFM12N10 データシート - GE Solid State
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RFM12N10
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GE Solid State
N-Channel Enhancement-Mode Power Field-Effect Transistors
FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device
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N-Channel Enhancement-Mode Power MOS Field-Effect Transistors ( Rev : V2 )
New Jersey Semiconductor
N-Channel logic enhancement mode power field effect transistors
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
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