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RF2145 データシート - RF Micro Devices

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部品番号
RF2145

コンポーネント説明

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6 Pages

File Size
74.8 kB

メーカー
RFMD
RF Micro Devices RFMD

Product Description
The RF2145 is a high power, high efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in a 4-cell DCS1800 or DCS1900 handset. The device is packaged in a 16-lead plastic package with wide ground leads, and is self-contained with the exception of the output matching network and power supply feed line. Only a single positive voltage is required to operate with full power and efficiency, and on-board power control and power-down functions are provided.


FEATUREs
• Single 4.8V Power Supply
• +32dBm Output Power
• 28dB Small Signal Gain
• 55% Power Added Efficiency
• Power Control
• 1700MHz to 1900MHz Frequency Range

Typical Applications
• 4.8V DCS1800/1900 Handsets
• 3V DECT Handsets and Base Stations
• Commercial and Consumer Systems
• Portable Battery Powered Equipment

Page Link's: 1  2  3  4  5  6 

部品番号
コンポーネント説明
PDF
メーカー
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