メーカー
Intersil
This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
FEATUREs
• 3.5A, 12V (N-Channel) 2.5A, 12V (P-Channel)
• rDS(ON) = 0.050Ω (N-Channel) rDS(ON) = 0.130Ω (P-Channel)
• Temperature Compensating PSPICE® Model
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET™ Power MOSFET
Fairchild Semiconductor
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Harris Semiconductor
14A, 60V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
Harris Semiconductor
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
Harris Semiconductor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
Siemens AG
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
Siemens AG
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
Siemens AG
3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET™ Power MOSFET
Fairchild Semiconductor
20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
Fairchild Semiconductor
20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
Intersil
