DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES
   High power gain:
      Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
   High Efficiency: 60%typ.

APPLICATION
   For output stage of high power amplifiers in VHF band
   Mobile radio sets.