RD16HHF1(2010) データシート - MITSUBISHI ELECTRIC
部品番号
RD16HHF1
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9 Pages
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256 kB
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MITSUBISHI ELECTRIC
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF band mobile radio sets.
部品番号
コンポーネント説明
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