DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.