DESCRIPTION
The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.

FEATURES
■ Phototransistor output
■ High Sensitivity
■ Low cost plastic housing
■ IR transparent plastic covers for dust protection.