4M x 4-Bit Dynamic RAM

The HYB 5116400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 5116400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5116400BJ/BT to be packaged in a standard SOJ 26/24 or TSOPII-26/24 plastic package, both with 300 mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL.

Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Performance:
• Single + 5 V (± 10 %) supply
• Low power dissipation
   max. 550 active mW (-50 version)
   max. 495 active mW (-60 version)
   max. 440 active mW (-70 version)
   11 mW standby (TTL)
   5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh and test mode
• Fast page mode capability
• All inputs, outputs and clocks fully TTL-compatible
• 4096 refresh cycles / 64 ms
• Plastic Package: P-SOJ-26/24 300 mil
                              P TSOPII-26/24 300 mil