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Infineon Technologies
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Description
The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.
FEATUREs
• Broadband internal matching
• Typical CW performance, single side
- Output power (1dB compression) = 70 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Integrated ESD protection
• Excellent thermal stability
• Capable of handling 10:1 VSWR @ 30 V, 70 W
(CW) output power
• Pb-free and RoHS compliant
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
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High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz
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High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz ( Rev : 2015 )
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High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
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High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
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High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz ( Rev : 2010 )
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High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
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High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz ( Rev : 2010 )
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High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz
Cree, Inc
High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz
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