Description
The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

FEATUREs
• Broadband internal matching
• Typical EDGE performance
   - Average output power = 62 W
   - Gain = 14 dB
   - Efficiency = 32%
   - EVM = 1.7%
• Typical CW performance
   - Output power at P–1dB = 180 W
   - Gain = 13 dB
   - Efficiency = 47%
• Integrated ESD protection: Human Body
   Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
   160 W (CW) output power