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Infineon Technologies
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Description
The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
FEATUREs
• Broadband internal matching
• Typical EDGE performance
- Average output power = 55 W
- Gain = 15.5 dB
- Efficiency = 32%
- EVM = 1.7%
• Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 14.5 dB
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
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