PTF180101M データシート - Infineon Technologies
部品番号
PTF180101M
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Infineon Technologies
Description
The PTF180101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.
FEATUREs
• Typical EDGE performance
- Average output power = 4.0 W
- Gain = 17 dB
- Efficiency = 31%
- EVM = 1.3 %
• Typical CW performance
- Output Power at P–1dB = 10 W
- Gain = 16 dB
- Efficiency = 50%
• Integrated ESD protection:
Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
• Pb-free and RoHS compliant
部品番号
コンポーネント説明
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メーカー
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