Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.

FEATUREs
• AEC-Q101 qualified
• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• Recommended to PFC applications
• PPAP capable
• ECOPACK®2 compliant component