General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection 1 kV HBM

APPLICATIONs
• High-side load switch and charging switch for portable devices
• Power management in battery driven portables
• LED driver
• DC-to-DC converter
• Drain-source on-state resistance RDSon = 100 mΩ