General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

FEATUREs and benefits
• 1.8 V RDSon rated for low-voltage gate drive
• Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Integrated ultra low VF MEGA Schottky diode

APPLICATIONs
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management