Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

FEATUREs
■ TrenchMOS™ technology
■ Low on-state resistance
■ Avalanche ruggedness rated
■ Logic level compatible
■ Surface mount package.

APPLICATIONs
■ DC to DC converters
■ Synchronous rectification.