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PESD3V3S2UQ データシート - NXP Semiconductors.

PESD24VS2UQ image

部品番号
PESD3V3S2UQ

Other PDF
  2008  

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page
13 Pages

File Size
136.2 kB

メーカー
NXP
NXP Semiconductors. NXP

General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients.


FEATUREs
■ Unidirectional ESD protection of up to two lines
■ ESD protection up to 30 kV
■ Max. peak pulse power: PPP = 150 W at tp = 8/20 μs
■ IEC 61000-4-2; level 4 (ESD)
■ Low clamping voltage: VCL = 20 V at IPP = 15 A
■ IEC 61000-4-5 (surge); IPP = 15 A at tp = 8/20 μs
■ Low reverse leakage current: IRM < 1 nA


APPLICATIONs
■ Computers and peripherals
■ High-speed data lines
■ Audio and video equipment
■ Parallel ports
■ Communication systems


部品番号
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