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Nexperia B.V. All rights reserved
General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA123TMB.
FEATUREs and benefits
◾ 100 mA output current capability
◾ Reduces component count
◾ Built-in bias resistors
◾ Reduces pick and place costs
◾ Simplifies circuit design
◾ AEC-Q101 qualified
◾ Leadless ultra small SMD plastic
package
◾ Low package height of 0.37 mm
APPLICATIONs
◾ Low-current peripheral driver
◾ Control of IC inputs
◾ Replaces general-purpose transistors
in digital applications
◾ Mobile applications
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Philips Electronics
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
NXP Semiconductors.
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
Nexperia B.V. All rights reserved
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
NXP Semiconductors.
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Philips Electronics
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Nexperia B.V. All rights reserved
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
NXP Semiconductors.
NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
NXP Semiconductors.
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Nexperia B.V. All rights reserved
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
NXP Semiconductors.