1.0 – 15.0 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detectors

   PCI-3TE series features three-stage thermoelectrically cooled IR photoconductive detectors based on sophisticated HgCdTe heterostructures for the best performance and stability, optically immersed in order to improve parameters of the devices. The detectors are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.