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PBSS5420D-1 データシート - Philips Electronics

PBSS5420D image

部品番号
PBSS5420D-1

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page
16 Pages

File Size
110.1 kB

メーカー
Philips
Philips Electronics Philips

General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package.

NPN complement: PBSS4420D.


FEATUREs
■ Very low collector-emitter saturation resistance
■ Ultra low collector-emitter saturation voltage
■ 4 A continuous collector current
■ Up to 15 A peak current
■ High efficiency leading to less heat generation


APPLICATIONs
■ Power management functions
■ Charging circuits
■ DC-to-DC conversion
■ MOSFET gate driving
■ Power switches (e.g. motors, fans)
■ TFT backlight inverter


部品番号
コンポーネント説明
PDF
メーカー
20 V, 4 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
20 V, 4 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
20 V, 4 A NPN low VCEsat (BISS) transistor
Philips Electronics
20 V, 4 A NPN low VCEsat (BISS) transistor
Philips Electronics
20 V, 4 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
20 V, 4 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
20 V, 4 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
20 V, 5 A PNP low VCEsat (BISS) transistor
Philips Electronics
20 V, 5 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
20 V, 3 A PNP low VCEsat (BISS) transistor
Philips Electronics

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