General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4041NX.

FEATUREs and benefits
■ Very low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High energy efficiency due to less heat generation
■ AEC-Q101 qualified
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

APPLICATIONs
■ Loadswitch
■ Battery-driven devices
■ Power management
■ Charging circuits
■ Power switches (e.g. motors, fans)