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PBHV9040T データシート - NXP Semiconductors.

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部品番号
PBHV9040T

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12 Pages

File Size
103.5 kB

メーカー
NXP
NXP Semiconductors. NXP

General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T.


FEATUREs
■ High voltage
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ AEC-Q101 qualified


APPLICATIONs
■ Electronic ballast for fluorescent lighting
■ LED driver for LED chain module
■ LCD backlighting
■ High Intensity Discharge (HID) front lighting
■ Automotive motor management
■ Hook switch for wired telecom
■ Switch mode power supply

 

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部品番号
コンポーネント説明
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メーカー
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
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500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
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Nexperia B.V. All rights reserved
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NXP Semiconductors.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor ( Rev : 2008 )
NXP Semiconductors.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
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