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PA1814 データシート - Renesas Electronics

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部品番号
PA1814

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172.8 kB

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Renesas
Renesas Electronics Renesas

DESCRIPTION
The µPA1814 is a switching device which can be driven directly by a 4 V power source.
The µPA1814 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
   RDS(on)1 = 16 mΩ MAX. (VGS = –10 V, ID = –3.5 A)
   RDS(on)2 = 24 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A)
   RDS(on)3 = 27 mΩ MAX. (VGS = –4.0 V, ID = –3.5 A)
• Built-in G-S protection diode against ESD


部品番号
コンポーネント説明
PDF
メーカー
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology

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