Description:
OPB710 and OPB710F consist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. OPB730 and OPB730F consist of a gallium arsenide infrared emitting diode and an NPN silicon photodarlington.
On each sensor, the emitting diode and detector are mounted side-by-side on parallel axes in a standard TO-72 header. A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector.
The OPB710F and OPB730F (“F” versions) have a filtering material added to the epoxy to reduce the effect of ambient light. The package contains an internal barrier which prevents diode emissions from reaching the sensor directly.

FEATUREs:
• Choice of phototransistor or photodarlington output
• Unfocused for sensing diffuse surface
• Mounted on standard TO-72 header
• Available in clear encapsulating epoxy (OPB710, OPB730)
• Filtered to reduce the effect of visible or fluorescent light
   (OPB710F, OPB730F)

APPLICATIONs:
• Non-contact reflective object sensor
• Assembly line automation
• Machine automation
• Machine safety
• End of travel sensor
• Door sensor