Description:
The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times.

FEATUREs:
High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA
Low Noise Figure: NF = 2dB Typ @ f = 1GHz
High Power Gain: Gpe = 10dB Min @ f = 1GHz
Third Order Intercept: +23dBm Typ

Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . .30mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . 0.375W
Derate Above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . -65° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . 300°C/W