Description:
The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.

FEATUREs:
• High DC Current Gain:
   hFE = 2500 Typ (NTE263)
         = 3500 Typ (NTE264)
• Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min
• Low Collector–Emitter Saturation Voltage:
   VCE(sat) = 2V Max @ IC = 5A
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor